1. Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing. (30th January 2017) Authors: Huang, Wen-Hsien; Shieh, Jia-Min; Kao, Ming-Hsuan; Shen, Chang-Hong; Huang, Tzu-En; Wang, Hsing-Hsiang; Yang, Chih-Chao; Hsieh, Tung-Ying; Hsieh, Jin-Long; Yu, Peichen; Yeh, Wen-Kuan Journal: Applied physics express Issue: Volume 10:Number 2(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗