1. Bipolar switching properties and electrical conduction mechanism of manganese oxide RRAM devices. (August 2017) Authors: Chen, Kai-Huang; Kao, Ming-Cheng; Huang, Shou-Jen; Li, Cheng-Ying; Cheng, Chien-Min; Wu, Sean; Wu, Zong-Hsun Journal: Ceramics international Issue: Volume 43(2017)Supplement 1 Page Start: S253 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Dielectric characteristics investigation of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 ferroelectric thin films. Issue 168 (2nd January 2016) Authors: Chen, Kai-Huang; Wu, Sean; Huang, Shou-Jen Journal: Integrated ferroelectrics Issue: Issue 168(2016) Page Start: 18 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current. (December 2018) Authors: Chen, Kai-Huang; Cheng, Chien-Min; Li, Cheng-Ying; Huang, Shou-Jen Journal: Microelectronics and reliability Issue: Volume 91(2018)Part 2 Page Start: 330 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. The development of discriminants to prevent erroneous prediction by GM(1, 1). (16th November 2016) Authors: Huang, Shou-Jen; Chen, Chun-I Journal: Journal of the Chinese Institute of Engineers Issue: Volume 39:Number 8(2016) Page Start: 919 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗