1. A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory. Issue 36 (6th September 2016) Authors: Shao, Xing Long; Kim, Kyung Min; Yoon, Kyung Jean; Song, Seul Ji; Yoon, Jung Ho; Kim, Hae Jin; Park, Tae Hyung; Kwon, Dae Eun; Kwon, Young Jae; Kim, Yu Min; Hu, Xi Wen; Zhao, Jin Shi; Hwang, Cheol Seong Journal: Nanoscale Issue: Volume 8:Issue 36(2016) Page Start: 16455 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗