Author/Creator: Hu, Dongqing - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Hu, Dongqing

1. Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress. (June 2022)

Authors:: Wang, Lihao; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Hu, Dongqing; Wu, Yu; Wang, Liang; Li, Tongde; Deng, Zhonghan
Journal:: Microelectronics and reliability
Issue:: Volume 133(2022)
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Record Type:: Journal Article
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2. Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs. (October 2022)

Authors:: Wang, Lihao; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Wang, Liang; Li, Tongde; Hu, Dongqing; Wu, Yu; Deng, Zhonghan
Journal:: Microelectronics and reliability
Issue:: Volume 137(2022)
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Record Type:: Journal Article
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3. Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes. (March 2018)

Authors:: Jia, Yunpeng; Lin, Zhenhua; Hu, Dongqing; Wu, Yu; Li, Peng; Liu, Guanghai
Journal:: Microelectronics and reliability
Issue:: Volume 82(2018)
Page Start:: 37
Record Type:: Journal Article
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4. Role modeling effects: how leader's job involvement affects follower creativity. (19th May 2022)

Authors:: Hu, Dongqing; Gu, Qinxuan; Zhang, Yinxuan
Journal:: Asia Pacific journal of human resources
Issue:: Volume 61:Number 1(2023)
Page Start:: 101
Record Type:: Journal Article
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5. SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness. (2nd December 2021)

Authors:: Wang, Lihao; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Wang, Liang; Hu, Dongqing; Wu, Yu; Deng, Zhonghan
Journal:: Japanese journal of applied physics
Issue:: Volume 60:Number 12(2021)
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Record Type:: Journal Article
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