1. Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2 Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory. (18th June 2021) Authors: Liao, C.-Y.; Hsiang, K.-Y.; Chang, S.-H.; Chiang, S.-H.; Hsieh, F.-C.; Liu, J.-H.; Liang, H.; Luo, Z.-F.; Lin, C.-Y.; Chen, L.-Y.; Hu, V. P.-H.; Lee, M. H. Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 6(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗