1. Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack. (21st December 2021) Authors: Baig, Md Aftab; Le, Hoang-Hiep; De, Sourav; Chang, Che-Wei; Hsieh, Chia-Chi; Huang, Xiao-Shan; Lee, Yao-Jen; Lu, Darsen D Journal: Semiconductor science and technology Issue: Volume 37:Number 2(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗