Author/Creator: Houadef, Ali - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Houadef, Ali

1. Detailed total ionizing dose effects on LDMOS transistors. (September 2022)

Authors:: Houadef, Ali; Djezzar, Boualem
Journal:: Microelectronics and reliability
Issue:: Volume 136(2022)
Page Start:
Record Type:: Journal Article
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2. Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate. Issue 10 (10th August 2021)

Authors:: Houadef, Ali; Djezzar, Boualem
Journal:: International journal of RF and microwave computer-aided engineering
Issue:: Volume 31:Issue 10(2021)
Page Start:: n/a
Record Type:: Journal Article
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