1. Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments. (20th March 2019) Authors: Wang, Buguo; Hogsed, Michael R; Harris, Thomas R; Wallace, Patrick M; Kouvetakis, John Journal: Semiconductor science and technology Issue: Volume 34:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗