1. Effects of high‐temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation. Issue 11 (13th August 2013) Authors: Schwab, Christoph; Hofmann, Marc; Heller, Rene; Seiffe, Johannes; Rentsch, Jochen; Preu, Ralf Journal: Physica status solidi Issue: Volume 210:Issue 11(2013:Nov.) Page Start: 2399 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. PECVD Al2O3/a‐Si:B as a dopant source and surface passivation. Issue 8 (16th April 2013) Authors: Seiffe, Johannes; Gahoi, Amit; Hofmann, Marc; Rentsch, Jochen; Preu, Ralf Journal: Physica status solidi Issue: Volume 210:Issue 8(2013:Aug.) Page Start: 1593 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗