1. Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths. (19th June 2019) Authors: Lin, Wei-Chun; Zhong, Yi-Nan; Tsai, Ming-Yan; Ho, Wei-Cheng; Yu, Yi-Hsuan; Hsin, Yue-Ming Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: Q123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths. (1st January 2019) Authors: Lin, Wei-Chun; Zhong, Yi-Nan; Tsai, Ming-Yan; Ho, Wei-Cheng; Yu, Yi-Hsuan; Hsin, Yue-Ming Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: Q123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗