1. Electrical transport properties of Ge-doped GaN nanowires. (11th March 2015) Authors: Schäfer, M; Günther, M; Länger, C; Müßener, J; Feneberg, M; Uredat, P; Elm, M T; Hille, P; Schörmann, J; Teubert, J; Henning, T; Klar, P J; Eickhoff, M Journal: Nanotechnology Issue: Volume 26:Number 13(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗