1. A Method for Thermal Resistance Test of Reverse-Conducting IGBT (RC-IGBT). Issue 2 (January 2021) Authors: Chen, Y; Zhang, P; Hu, X F; Huang, H Z; Lai, P; He, Z Y; Chen, Y Q Journal: IOP conference series Issue: Volume 1043:Issue 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise. (23rd December 2020) Authors: Xu, X B; Li, B; Chen, Y Q; Wu, Z H; He, Z Y; En, Y F; Huang, Y Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise. (23rd December 2020) Authors: Xu, X B; Li, B; Chen, Y Q; Wu, Z H; He, Z Y; En, Y F; Huang, Y Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗