Author/Creator: He, Pin - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator He, Pin

1. Effect of sputtering atmosphere on the characteristics of ZrOx resistive switching memory. (25th April 2017)

Authors:: He, Pin; Ye, Cong; Wu, Jiaji; Wei, Wei; Wei, Xiaodi; Wang, Hao; Zhang, Rulin; Zhang, Li; Xia, Qing; Wang, Hanbin
Journal:: Semiconductor science and technology
Issue:: Volume 32:Number 5(2017:May)
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Record Type:: Journal Article
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2. Enhanced resistive switching performance for bilayer HfO2/TiO2 resistive random access memory. (1st September 2016)

Authors:: Ye, Cong; Deng, Tengfei; Zhang, Junchi; Shen, Liangping; He, Pin; Wei, Wei; Wang, Hao
Journal:: Semiconductor science and technology
Issue:: Volume 31:Number 10(2016:Oct.)
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Record Type:: Journal Article
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3. Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment. (February 2016)

Authors:: Deng, Tengfei; Ye, Cong; Wu, Jiaji; He, Pin; Wang, Hao
Journal:: Microelectronics and reliability
Issue:: Volume 57(2016)
Page Start:: 34
Record Type:: Journal Article
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4. Maize hybrid yield and physiological response to plant density across four decades in China. (3rd September 2022)

Authors:: He, Pin; Ding, Xiangpeng; Bai, Jing; Zhang, Jiwang; Liu, Peng; Ren, Baizhao; Zhao, Bin
Journal:: Agronomy Journal
Issue:: Volume 114:Number 5(2022)
Page Start:: 2886
Record Type:: Journal Article
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5. Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer. (1st March 2016)

Authors:: Wu, JiaJi; Ye, Cong; Zhang, Jieqiong; Deng, Tengfei; He, Pin; Wang, Hao
Journal:: Materials science in semiconductor processing
Issue:: Volume 43(2016:Mar.)
Page Start:: 144
Record Type:: Journal Article
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6. Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer. (1st March 2016)

Authors:: Wu, JiaJi; Ye, Cong; Zhang, Jieqiong; Deng, Tengfei; He, Pin; Wang, Hao
Journal:: Materials science in semiconductor processing
Issue:: Volume 43(2016:Mar.)
Page Start:: 144
Record Type:: Journal Article
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7. Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review. Issue 1 (January 2016)

Authors:: Ye, Cong; Wu, Jiaji; He, Gang; Zhang, Jieqiong; Deng, Tengfei; He, Pin; Wang, Hao
Journal:: Journal of materials science & technology
Issue:: Volume 32:Issue 1(2016:Jan.)
Page Start:: 1
Record Type:: Journal Article
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8. Segmentation-guided Denoising Network for Low-dose CT Imaging. (December 2022)

Authors:: Huang, Zhenxing; Liu, Zhou; He, Pin; Ren, Ya; Li, Shuluan; Lei, Yuanyuan; Luo, Dehong; Liang, Dong; Shao, Dan; Hu, Zhanli; Zhang, Na
Journal:: Computer methods and programs in biomedicine
Issue:: Volume 227(2022)
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Record Type:: Journal Article
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9. To Align Multimodal Lumbar Spine Images via Bending Energy Constrained Normalized Mutual Information. (11th July 2020)

Authors:: Wu, Shibin; He, Pin; Yu, Shaode; Zhou, Shoujun; Xia, Jun; Xie, Yaoqin
Other Names:: De Zordo Tobias Academic Editor.
Journal:: BioMed research international
Issue:: Volume 2020(2020)
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Record Type:: Journal Article
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