1. (Invited) Controlling the Carbon Vacancy in 4H-SiC by Thermal Processing. (23rd July 2018) Authors: Ayedh, Hussein M.; Baathen, Marianne E.; Galeckas, Augustinas; Hassan, Jawad Ul; Bergman, J. P.; Nipoti, Roberta; Hallen, Anders; Svensson, Bengt G Journal: ECS transactions Issue: Volume 86:Number 12(2018) Page Start: 91 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. In‐grown stacking‐faults in 4H‐SiC epilayers grown on 2° off‐cut substrates. Issue 6 (30th January 2015) Authors: Lilja, Louise; Hassan, Jawad Ul; Janzén, Erik; Bergman, J. Peder Journal: Physica status solidi Issue: Volume 252:Issue 6(2015:Jun.) Page Start: 1319 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗