1. Control of hydrogen and carbon impurity inclusion during the growth of GaAsN thin film by atomic layer epitaxy. (16th December 2015) Authors: Yokoyama, Yuki; Fukuyama, Atsuhiko; Haraguchi, Tomohiro; Yamauchi, Toshihiro; Ikari, Tetsuo; Suzuki, Hidetoshi Journal: Japanese journal of applied physics Issue: Volume 55:Number 1(2016:Jan.)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗