1. X-ray Topography Studies of Relaxation during the Homo-Epitaxy of 4H-SiC. Issue 1741 (6th February 2015) Authors: Wang, H.; Dudley, M.; Zhang, J.; Thomas, B.; Chung, G.; Sanchez, E. K.; Hansen, D.; Mueller, S. G. Editors: Albrecht, M.; Aubry, S.; Collazo, R.; Mishra, R. K.; Wu, C-C. Journal: MRS proceedings Issue: Issue 1741:(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗