1. Non‐ and semipolar AlInN one‐dimensionally lattice‐matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN‐based devices. Issue 1 (28th September 2015) Authors: Buß, E. R.; Horenburg, P.; Rossow, U.; Bremers, H.; Meisch, T.; Caliebe, M.; Scholz, F.; Hangleiter, A. Journal: Physica status solidi Issue: Volume 253:Issue 1(2016) Page Start: 84 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗