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Author/Creator Hambsch, Sebastian

1. Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism. (17th February 2022)

Authors:
Heisig, Thomas; Lange, Kristof; Gutsche, Alexander; Goß, Kalle Thorben; Hambsch, Sebastian; Locatelli, Andrea; Menteş, Tevfik Onur; Genuzio, Francesca; Menzel, Stephan; Dittmann, Regina
Journal:
Advanced Electronic Materials
Issue:
Volume 8:Number 8(2022)
Page Start:
n/a
Record Type:
Journal Article
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2. Valence change ReRAMs (VCM) - Experiments and modelling: general discussion. (21st January 2019)

Authors:
Aono, Mazakazu; Baeumer, Christoph; Bartlett, Philip; Brivio, Stefano; Burr, Geoffrey; Burriel, Monica; Carlos, Emanuel; Deswal, Sweety; Deuermeier, Jonas; Dittmann, Regina; Du, Hongchu; Gale, Ella; Hambsch, Sebastian; Hilgenkamp, Hans; Ielmini, Daniele; Kenyon, Anthony J.; Kiazadeh, Asal; Kindsm...
Journal:
Faraday discussions
Issue:
Volume 213(2019)
Page Start:
259
Record Type:
Journal Article
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