1. Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers. Issue 1 (1st February 2019) Authors: Kim, Honghyuk; Guan, Yingxin; Kuech, Thomas F.; Mawst, Luke J. Journal: IET optoelectronics Issue: Volume 13:Issue 1(2019) Page Start: 12 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗