1. 20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate. (25th January 2018) Authors: Gu, Zhichen; Inoue, Daisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa Journal: Applied physics express Issue: Volume 11:Number 2(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗