1. Relaxation mechanism of GaP grown on 001 Si substrates: influence of defects on the growth of AlGaP layers on GaP/Si templates. Issue 20 (18th October 2021) Authors: Pantzas, K.; Beaudoin, G.; Bailly, M.; Martin, A.; Grisard, A.; Dolfi, D.; Mauguin, O.; Largeau, L.; Sagnes, I.; Patriarche, G. Journal: Philosophical magazine Issue: Volume 101:Issue 20(2021) Page Start: 2189 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗