1. Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors. (16th October 2019) Authors: Baranovskii, S. D.; Nenashev, A. V.; Oelerich, J. O.; Greiner, S. H. M.; Dvurechenskii, A. V.; Gebhard, F. Journal: Europhysics letters Issue: Volume 127:Number 5(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗