1. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. (February 2018) Authors: Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Putcha, V.; Bury, E.; Simicic, M.; Chasin, A.; Linten, D.; Parvais, B.; Catthoor, F.; Rzepa, G.; Waltl, M.; Grasser, T. Journal: Microelectronics and reliability Issue: Volume 81(2018) Page Start: 186 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs. Issue 9 (August 2015) Authors: Sharma, P.; Tyaginov, S.; Wimmer, Y.; Rudolf, F.; Rupp, K.; Enichlmair, H.; Park, J.-M.; Ceric, H.; Grasser, T. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1427 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Comphy — A compact-physics framework for unified modeling of BTI. (June 2018) Authors: Rzepa, G.; Franco, J.; O'Sullivan, B.; Subirats, A.; Simicic, M.; Hellings, G.; Weckx, P.; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, P.J.; Linten, D.; Kaczer, B.; Grasser, T. Journal: Microelectronics and reliability Issue: Volume 85(2018) Page Start: 49 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Crystalline insulators for scalable 2D nanoelectronics. (November 2021) Authors: Illarionov, Y.Y.; Knobloch, T.; Grasser, T. Journal: Solid-state electronics Issue: Volume 185(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs. (June 2019) Authors: Grill, A.; Stampfer, B.; Im, Ki-Sik; Lee, J.-H.; Ostermaier, C.; Ceric, H.; Waltl, M.; Grasser, T. Journal: Solid-state electronics Issue: Volume 156(2019) Page Start: 41 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. (August 2018) Authors: Goes, W.; Wimmer, Y.; El-Sayed, A.-M.; Rzepa, G.; Jech, M.; Shluger, A.L.; Grasser, T. Journal: Microelectronics and reliability Issue: Volume 87(2018) Page Start: 286 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016) Authors: Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Simicic, M.; Putcha, V.; Bury, E.; Cho, M.; Degraeve, R.; Linten, D.; Groeseneken, G.; Debacker, P.; Parvais, B.; Raghavan, P.; Catthoor, F.; Rzepa, G.; Waltl, M.; Goes, W.; Grasser, T. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. (November 2016) Authors: Kaczer, B.; Franco, J.; Weckx, P.; Roussel, Ph.J.; Simicic, M.; Putcha, V.; Bury, E.; Cho, M.; Degraeve, R.; Linten, D.; Groeseneken, G.; Debacker, P.; Parvais, B.; Raghavan, P.; Catthoor, F.; Rzepa, G.; Waltl, M.; Goes, W.; Grasser, T. Journal: Solid-state electronics Issue: Volume 125(2016) Page Start: 52 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗