Author/Creator: Goff, L. E. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Goff, L. E.

1. Properties of GaN nanowires with ScxGa1−xN insertion. Issue 8 (25th July 2017)

Authors:: Bao, A.; Goff, L. E.; Zhu, T.; Sahonta, S.‐L.; Ritchie, D. A.; Joyce, H. J.; Moram, M. A.; Oliver, R. A.
Journal:: Physica status solidi
Issue:: Volume 254:Issue 8(2017)
Page Start:: n/a
Record Type:: Journal Article
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2. The effect of metal‐rich growth conditions on the microstructure of ScxGa1−xN films grown using molecular beam epitaxy. Issue 12 (24th August 2015)

Authors:: Tsui, H. C. L.; Goff, L. E.; Barradas, N. P.; Alves, E.; Pereira, S.; Beere, H. E.; Farrer, I.; Nicoll, C. A.; Ritchie, D. A.; Moram, M. A.
Journal:: Physica status solidi
Issue:: Volume 212:Issue 12(2015:Dec.)
Page Start:: 2837
Record Type:: Journal Article
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