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Author/Creator Godejohann, Birte‐Julia

1. AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution. Issue 8 (3rd July 2017)

Authors:
Godejohann, Birte‐Julia; Ture, Erdin; Müller, Stefan; Prescher, Mario; Kirste, Lutz; Aidam, Rolf; Polyakov, Vladimir; Brückner, Peter; Breuer, Steffen; Köhler, Klaus; Quay, Rüdiger; Ambacher, Oliver
Journal:
Physica status solidi
Issue:
Volume 254:Issue 8(2017)
Page Start:
n/a
Record Type:
Journal Article
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Available online (eLD content is only available in our Reading Rooms) ↗

2. Growth model investigation for AlN/Al(Ga)InN interface growth by plasma‐assisted molecular beam epitaxy for high electron mobility transistor applications. Issue 12 (27th August 2014)

Authors:
Aidam, Rolf; Diwo, Elke; Godejohann, Birte‐Julia; Kirste, Lutz; Quay, Rüdiger; Ambacher, Oliver
Journal:
Physica status solidi
Issue:
Volume 211:Issue 12(2014:Dec.)
Page Start:
2854
Record Type:
Journal Article
View Content:
Available online (eLD content is only available in our Reading Rooms) ↗

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