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2. Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric. (1st January 2016)

3. Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric. (7th July 2016)

6. Substitution of silicon within the rhombohedral boron carbide (B4C) crystal lattice through high-energy ball-milling. Issue 44 (21st October 2015)