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Author/Creator Gerosa, A.

1. Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 μm AlGaN/GaN HEMTs. (November 2022)

Authors:
Chiocchetta, F.; De Santi, C.; Rampazzo, F.; Mukherjee, K.; Grünenpütt, Jan; Sommer, Daniel; Blanck, Hervé; Lambert, Benoit; Gerosa, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Journal:
Microelectronics and reliability
Issue:
Volume 138(2022)
Page Start:
Record Type:
Journal Article
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