1. A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles. (27th May 2016) Authors: Musolino, M; Tahraoui, A; Treeck, D van; Geelhaar, L; Riechert, H Journal: Nanotechnology Issue: Volume 27:Number 27(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A route for the top-down fabrication of ordered ultrathin GaN nanowires. (1st March 2023) Authors: Oliva, M; Kaganer, V; Pudelski, M; Meister, S; Tahraoui, A; Geelhaar, L; Brandt, O; Auzelle, T Journal: Nanotechnology Issue: Volume 34:Number 20(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes. (6th February 2015) Authors: Musolino, M; Tahraoui, A; Fernández-Garrido, S; Brandt, O; Trampert, A; Geelhaar, L; Riechert, H Journal: Nanotechnology Issue: Volume 26:Number 8(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies. (12th February 2019) Authors: Sobanska, M; Zytkiewicz, Z R; Calabrese, G; Geelhaar, L; Fernández-Garrido, S Journal: Nanotechnology Issue: Volume 30:Number 15(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils. (20th September 2017) Authors: Calabrese, G; Pettersen, S V; Pfüller, C; Ramsteiner, M; Grepstad, J K; Brandt, O; Geelhaar, L; Fernández-Garrido, S Journal: Nanotechnology Issue: Volume 28:Number 42(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process. (12th October 2015) Authors: Zettler, J K; Corfdir, P; Geelhaar, L; Riechert, H; Brandt, O; Fernández-Garrido, S Journal: Nanotechnology Issue: Volume 26:Number 44(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Optical properties of GaN nanowires grown on chemical vapor deposited-graphene. (14th March 2019) Authors: Mancini, L; Morassi, M; Sinito, C; Brandt, O; Geelhaar, L; Song, Hyun-Gyu; Cho, Yong-Hoon; Guan, N; Cavanna, A; Njeim, J; Madouri, A; Barbier, C; Largeau, L; Babichev, A; Julien, F H; Travers, L; Oehler, F; Gogneau, N; Harmand, J-C; Tchernycheva, M Journal: Nanotechnology Issue: Volume 30:Number 21(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Photoelectrochemical properties of InN nanowire photoelectrodes for solar water splitting. (6th June 2016) Authors: Kamimura, J; Bogdanoff, P; Ramsteiner, M; Geelhaar, L; Riechert, H Journal: Semiconductor science and technology Issue: Volume 31:Number 7(2016:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Self-assembled growth of GaN nanowires on amorphous AlxOy: from nucleation to the formation of dense nanowire ensembles. (29th June 2016) Authors: Sobanska, M; Fernández-Garrido, S; Zytkiewicz, Z R; Tchutchulashvili, G; Gieraltowska, S; Brandt, O; Geelhaar, L Journal: Nanotechnology Issue: Volume 27:Number 32(2016) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗