1. Growth and Properties of Intentionally Carbon‐Doped GaN Layers. Issue 2 (22nd October 2019) Authors: Richter, Eberhard; Beyer, Franziska C.; Zimmermann, Friederike; Gärtner, Günter; Irmscher, Klaus; Gamov, Ivan; Heitmann, Johannes; Weyers, Markus; Tränkle, Günther Journal: Crystal research and technology Issue: Volume 55:Issue 2(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗