1. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology. (February 2023) Authors: Navarro, C.; Donetti, L.; Padilla, J.L.; Medina-Bailon, C.; Galdon, J.C.; Marquez, C.; Sampedro, C.; Gamiz, F. Journal: Solid-state electronics Issue: Volume 200(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗