1. Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor. (24th August 2017) Authors: Suzuki, Tatsuya; Joseph, Benedict Mutunga; Fukai, Misato; Kamiko, Masao; Kyuno, Kentaro Journal: Applied physics express Issue: Volume 10:Number 9(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗