1. 19‐1: Invited Paper: Stability of Sputtered Amorphous Tungsten‐doped Indium Oxide Based Thin‐Film Transistors. Issue 1 (30th May 2018) Authors: Zhang, Qun; Yang, Zhao; Qu, Mingyue; Fu, Ruofan; Liu, Po-Tsun; Shieh, Han-Ping D. Journal: Digest of technical papers Issue: Volume 49:Issue 1(2018) Page Start: 225 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Amorphous nickel incorporated tin oxide thin film transistors. (11th August 2017) Authors: Yang, Jianwen; Ren, Jinhua; Lin, Dong; Han, Yanbing; Qu, Mingyue; Pi, Shubin; Fu, Ruofan; Zhang, Qun Journal: Journal of physics Issue: Volume 50:Number 35(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Asymmetric contact in tin bismuth oxide thin film transistors. Issue 3 (29th November 2016) Authors: Yang, Jianwen; Han, Yanbing; Fu, Ruofan; Ren, Jinhua; Zhang, Qun Journal: Physica status solidi Issue: Volume 214:Issue 3(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. The Influence of Annealing Temperature on Amorphous Indium‐Zinc‐Tungsten Oxide Thin‐Film Transistors. Issue 6 (24th January 2018) Authors: Fu, Ruofan; Yang, Jianwen; Chang, Wei‐Chiao; Chang, Wei‐Cheng; Chang, Chien‐Min; Lin, Dong; Zhang, Qun; Liu, Po‐Tsun; Shieh, Han‐Ping D. Journal: Physica status solidi Issue: Volume 215:Issue 6(2018) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. The stability of tin silicon oxide thin-film transistors with different annealing temperatures. (30th August 2016) Authors: Yang, Jianwen; Fu, Ruofan; Han, Yanbing; Meng, Ting; Zhang, Qun Journal: Europhysics letters Issue: Volume 115:Number 2(2016:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗