1. In situ ohmic contact formation for n-type Ge via non-equilibrium processing. (4th October 2017) Authors: Prucnal, S; Frigerio, J; Napolitani, E; Ballabio, A; Berencén, Y; Rebohle, L; Wang, M; Böttger, R; Voelskow, M; Isella, G; Hübner, R; Helm, M; Zhou, S; Skorupa, W Journal: Semiconductor science and technology Issue: Volume 32:Number 11(2017:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing. (26th October 2017) Authors: Frigerio, J; Ballabio, A; Gallacher, K; Giliberti, V; Baldassarre, L; Millar, R; Milazzo, R; Maiolo, L; Minotti, A; Bottegoni, F; Biagioni, P; Paul, D; Ortolani, M; Pecora, A; Napolitani, E; Isella, G Journal: Journal of physics Issue: Volume 50:Number 46(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗