1. Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method. (August 2016) Authors: Toumi, S.; Ouennoughi, Z.; Strenger, K.C.; Frey, L. Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 56 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method. (August 2016) Authors: Toumi, S.; Ouennoughi, Z.; Strenger, K.C.; Frey, L. Journal: Solid-state electronics Issue: Volume 122(2016) Page Start: 56 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗