1. Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices. Issue 4 (21st October 2016) Authors: Fiorenza, Patrick; Greco, Giuseppe; Vivona, Marilena; Giannazzo, Filippo; Di Franco, Salvatore; Frazzetto, Alessia; Guarnera, Alfio; Saggio, Mario; Iucolano, Ferdinando; Patti, Alfonso; Roccaforte, Fabrizio Journal: Physica status solidi Issue: Volume 214:Issue 4(2017) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗