1. Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability. (19th October 2021) Authors: Gribisch, Philipp; Fissel, Andreas Journal: Semiconductor science and technology Issue: Volume 36:Number 11(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001). Issue 29 (13th May 2021) Authors: Gribisch, Philipp; Fissel, Andreas Journal: RSC advances Issue: Volume 11:Issue 29(2021) Page Start: 17526 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Growth and Dielectric Properties of Monoclinic Gd2O3 on Si(001). (22nd October 2019) Authors: Gribisch, Philipp; Roy Chaudhuri, Ayan; Fissel, Andreas Journal: ECS transactions Issue: Volume 93:Number 1(2019) Page Start: 57 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates. Issue 20 (9th February 2016) Authors: Wang, Li; Dimitrijev, Sima; Fissel, Andreas; Walker, Glenn; Chai, Jessica; Hold, Leonie; Fernandes, Alanna; Nguyen, Nam-Trung; Iacopi, Alan Journal: RSC advances Issue: Volume 6:Issue 20(2016) Page Start: 16662 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001). Issue 1 (11th February 2019) Authors: Gribisch, Philipp; Schmidt, Jan; Osten, Hans-Jörg; Fissel, Andreas Journal: Acta crystallographica Issue: Volume 75:Issue 1(2019:Feb.) Page Start: 59 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗