1. Physics-based stability analysis of MOS transistors. (November 2015) Authors: Ferrara, A.; Steeneken, P.G.; Boksteen, B.K.; Heringa, A.; Scholten, A.J.; Schmitz, J.; Hueting, R.J.E. Journal: Solid-state electronics Issue: Volume 113(2015) Page Start: 28 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗