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You searched for: Author/Creator Faili, F.Limit your search
- Faili, F. [remove] 1
- 621.381 1
- Electronics -- Periodicals 1
- aluminium compounds -- chemical vapour deposition -- diamond -- gallium compounds -- high electron mobility transistors -- III‐V semiconductors -- silicon -- substrates -- wide band gap semiconductors 1
- diamond substrate -- output power density -- RF performance -- high electron mobility transistors -- peak power‐added‐efficiency -- power gain -- gate‐width HEMT -- drain bias -- device wafers -- nitride transition layers -- dielectric deposition -- chemical vapour deposition -- dielectric adhering -- test HEMT -- gate length process -- frequency 10 GHz -- voltage 40 V -- size 0.25 mum -- AlGaN‐GaN -- Si 1