1. Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena *Project supported by the French Department of Defense (DGA). (January 2017) Authors: Latry, O.; Divay, A.; Fadil, D.; Dherbécourt, P. Journal: Journal of semiconductors Issue: Volume 38:Number 1(2017:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗