1. Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H. Issue 16 (4th May 2022) Authors: Vincent, Laetitia; Fadaly, Elham M. T.; Renard, Charles; Peeters, Wouter H. J.; Vettori, Marco; Panciera, Federico; Bouchier, Daniel; Bakkers, Erik P. A. M; Verheijen, Marcel A. Journal: Advanced materials interfaces Issue: Volume 9:Issue 16(2022) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗