1. Smooth plasma etching of GeSn nanowires for gate-all-around field effect transistors. (18th May 2021) Authors: Eustache, E; Mahjoub, M A; Guerfi, Y; Labau, S; Aubin, J; Hartmann, J M; Bassani, F; David, S; Salem, B Journal: Semiconductor science and technology Issue: Volume 36:Number 6(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗