1. Large boron‐interstitial cluster modelling in BF3 plasma implanted silicon. Issue 1 (9th December 2013) Authors: Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel‐Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.; Cristiano, Fuccio; Pichler, Peter; Tavernier, Clément; Windl, Wolfgang Journal: Physica status solidi Issue: Volume 11:Issue 1(2014:Jan.) Page Start: 117 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016) Authors: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F. Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. (December 2016) Authors: Essa, Z.; Pelletier, B.; Morin, P.; Boulenc, P.; Pakfar, A.; Tavernier, C.; Wacquant, F.; Zechner, C.; Juhel, M.; Autran, J.L.; Cristiano, F. Journal: Solid-state electronics Issue: Volume 126(2016) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗