1. Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide. (September 2018) Authors: Kim, Hyun-Seop; Eom, Su-Keun; Seo, Kwang-Seok; Kim, Hyungtak; Cha, Ho-Young Journal: Vacuum Issue: Volume 155(2018) Page Start: 428 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗