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You searched for: Author/Creator Enslin, Johannes

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1. Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements. (11th October 2018)

5. Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern. (24th March 2017)

6. Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs. Issue 10 (11th December 2017)

7. Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics. (3rd September 2018)

8. MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers (Phys. Status Solidi A 11∕2018). Issue 13 (12th July 2018)

9. MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers. Issue 13 (26th April 2018)

10. Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis. (August 2021)