1. Degradation mechanism of AlGaN/GaN HEMTs during high temperature operation stress. (15th December 2017) Authors: Chen, Y Q; Liao, X Y; Zeng, C; Peng, C; Liu, Y; Li, R G; En, Y F; Huang, Y Journal: Semiconductor science and technology Issue: Volume 33:Number 1(2018:Jan.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-silicon capacitor. (5th January 2015) Authors: Chen, Y Q; Xu, X B; Lei, Z F; Liao, X Y; Wang, X; Zeng, C; En, Y F; Huang, Y Journal: Journal of physics Issue: Volume 48:Number 3(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise. (23rd December 2020) Authors: Xu, X B; Li, B; Chen, Y Q; Wu, Z H; He, Z Y; En, Y F; Huang, Y Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise. (23rd December 2020) Authors: Xu, X B; Li, B; Chen, Y Q; Wu, Z H; He, Z Y; En, Y F; Huang, Y Journal: Semiconductor science and technology Issue: Volume 36:Number 2(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗