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Author/Creator Eddy, Charles

1. High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides. Issue 7 (7th February 2020)

Authors:
Mollah, Shahab; Hussain, Kamal; Floyd, Richard; Mamun, Abdullah; Gaevski, Mikhail; Chandrashekhar, MVS; Ahmad, Iftikhar; Simin, Grigory; Wheeler, Virginia; Eddy, Charles; Khan, Asif
Other Names:
Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor.
Journal:
Physica status solidi
Issue:
Volume 217:Issue 7(2020)
Page Start:
n/a
Record Type:
Journal Article
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2. Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric. (25th October 2019)

Authors:
Mollah, Shahab; Gaevski, Mikhail; Chandrashekhar, MVS; Hu, Xuhong; Wheeler, Virginia; Hussain, Kamal; Mamun, Abdullah; Floyd, Richard; Ahmad, Iftikhar; Simin, Grigory; Eddy, Charles; Khan, Asif
Journal:
Semiconductor science and technology
Issue:
Volume 34:Number 12(2019)
Page Start:
Record Type:
Journal Article
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