1. Design of Ion-Implanted Junction Termination Extension for Vertical GaN Pin Rectifiers. (8th September 2020) Authors: Cho, Minkyu; Xu, Zhiyu; Bakhtiary-Noodeh, Marzieh; Detchphrom, Theeradetch; Dupuis, Russell D; Shen, Shyh-Chiang Journal: ECS transactions Issue: Volume 98:Number 6(2020) Page Start: 49 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate. (7th September 2017) Authors: Sun, Haiding; Wu, Feng; Al tahtamouni, T M; Alfaraj, Nasir; Li, Kuang-Hui; Detchprohm, Theeradetch; Dupuis, Russell D; Li, Xiaohang Journal: Journal of physics Issue: Volume 50:Number 39(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗