1. Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes. Issue 7 (6th February 2020) Authors: Guo, Xiaoru; Mughal, Asad; Dunphy, Darren; Stone, Gregory; Miller, David; Huh, Sungwook Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗