Author/Creator: Divay, A. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Divay, A.

1. Ageing of GaN HEMT devices: which degradation indicators?. (January 2016)

Authors:: Divay, A.; Latry, O.; Duperrier, C.; Temcamani, F.
Journal:: Journal of semiconductors
Issue:: Volume 37:Number 1(2016:Jan.)
Page Start:
Record Type:: Journal Article
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2. An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors. Issue 9 (August 2015)

Authors:: Divay, A.; Masmoudi, M.; Latry, O.; Duperrier, C.; Temcamani, F.
Journal:: Microelectronics and reliability
Issue:: Volume 55:Issue 9/10(2015)
Page Start:: 1703
Record Type:: Journal Article
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3. Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. (September 2016)

Authors:: Divay, A.; Duperrier, C.; Temcamani, F.; Latry, O.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 585
Record Type:: Journal Article
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4. Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode. (September 2016)

Authors:: Divay, A.; Duperrier, C.; Temcamani, F.; Latry, O.
Journal:: Microelectronics and reliability
Issue:: Volume 64(2016)
Page Start:: 585
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗

5. Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena *Project supported by the French Department of Defense (DGA). (January 2017)

Authors:: Latry, O.; Divay, A.; Fadil, D.; Dherbécourt, P.
Journal:: Journal of semiconductors
Issue:: Volume 38:Number 1(2017:Jan.)
Page Start:
Record Type:: Journal Article
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗