1. Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy. (25th November 2021) Authors: Lingaparthi, R; Dharmarasu, N; Radhakrishnan, K; Zheng, Y Journal: Journal of physics Issue: Volume 55:Number 9(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si(111). (28th July 2016) Authors: Ravikiran, L; Radhakrishnan, K; Dharmarasu, N; Agrawal, M; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Siong, Ang Kian Journal: Semiconductor science and technology Issue: Volume 31:Number 9(2016:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗